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©2000 Fairchild Semiconductor InternationalRev. A, February 2000NPN Silicon TransistorAbsolute Maximum Ratings TC=25°C unless otherwise notedElectrical Characteristics TC=25°C unless otherwise noted. Pulse test: PW≤300µs, Duty cycle≤2% PulseSymbol datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other. Mje13009 npn silicon transistor unisonic technologies co., ltd 4 of 9 www.unisonic.com.tw qw-r203-024,f table 1. Test conditions for dynamic performance reverse bias safe operating area and inductive switching resistive switching.
Part Number : E13009L, KSE13009L
Function : NPN Transistor
Package : TO-3P Type
Manufactures : Fairchild
Image
Features
High Voltage Switch Mode Applications
1. High Speed Switching
2. Suitable for Switching Regulator and Motor Control
Absolute Maximum Ratings
- Collector-Base Voltage : VCBO = 700 V
- Collector-Emitter Voltage : VCEO = 400 V
- Emitter-Base Voltage : VEBO = 9 V
- Collector Current (DC) : IC = 12 A
- Collector Current (Pulse) : ICP = 24 A
- Base Current : IB = 6 A
- Collector Dissipation (TC=25°C) : PC = 130 W
- Junction Temperature : TJ = 150 °C
- Storage Temperature : TSTG = – 65 ~ 150 °C
Pinout